rev.1 dec. 04, 2006 page 1 of 4 HL7852G gaalas laser diode ode-208-063a (z) rev.1 dec. 04, 2006 description the HL7852G is a high-power 0.78 m band gaalas laser diode with a multi-quantum well (mqw) structure. it is suitable as a light source for optical disk memories, levelers and various other types of optical equipment. hermetic sealing of the package assures high reliability. features ? visible light output: p = 785 nm typ ? small beam ellipticity: 9.5:23 ? high output power: 50 mw (cw) ? built-in monitor photodiode ld pd 1 3 2 internal circuit package type ? HL7852G: g2 absolute maximum ratings (t c = 25c) item symbol ratings unit optical output power p o 50 mw pulse optical output power p o(pulse) 60 * mw ld reverse voltage v r(ld) 2 v pd reverse voltage v r(pd) 30 v operating temperature topr ?10 to +60 c storage temperature tstg ?40 to +85 c note: maximum 50% duty cycle, maximum 1 s pulse width. optical and electrical characteristics (t c = 25c) item symbol min typ max unit test conditions threshold current ith ? 45 70 ma slope efficiency s 0.35 0.55 0.7 mw/ma 40 (mw) / (i (45mw) ? i (5mw) ) ld operating current i op ? 135 165 ma p o = 50 mw ld operating voltage v op ? 2.3 2.7 v p o = 50 mw lasing wavelength p 775 785 795 nm p o = 50 mw beam divergence (parallel) // 8 9.5 12 p o = 50 mw, fwhm beam divergence (perpendicular) ? 18 23 28 p o = 50 mw, fwhm monitor current i s 25 45 150 a p o = 5 mw, v r(pd) = 5 v astigmatism a s ? 5 ? m p o = 5 mw, na = 0.4
HL7852G rev.1 dec. 04, 2006 page 2 of 4 typical characteristic curves 0200 160 120 80 40 50 40 30 20 10 0 -20 02040 p o = 50 mw t c = 25c 0 10 20 30 40 50 0 20 40 60 80 100 60 0 10 20 30 40 50 775 780 790 795 785 60 800 p o = 50 mw optical output power vs. forward current optical output power, p o (mw) forward current, i f (ma) case temperature, t c (c) monitor current vs. case temprature lasing wavelength vs. case temperature lasing wavelength, p (nm) case temperature, t c (c) far field pattern relative intensity angle, ( ) perpendicular parallel -40 -30 -10 10 30 1.0 0.8 0.6 0.4 0.2 0 monitor current, i s ( a) 0 1020304050 10 100 20 30 50 60 threshold current vs. case temperature threshold current, ith (ma) case temperature, t c (c) 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 60 slope efficiency vs. case temperature slope efficiency, s (mw/ma) case temperature, t c (c) 60c 25c t c = 0c p o = 5 mw v r(pd) = 5 v 60
HL7852G rev.1 dec. 04, 2006 page 3 of 4 package dimensions opj code jedec jeita mass (reference value) ld/g2 ? ? 1.1 g 1 2 3 1 2 3 9.0 +0 ?0.025 1.0 0.1 0.4 +0.1 ?0 (0.65) (90) 7.2 +0.3 ?0.2 6.2 0.2 ( 2.0) emitting point 2.45 1.5 0.1 9 1 3 ? 0.45 0.1 3.5 0.2 0.3 glass 2.54 0.35 unit: mm
HL7852G rev.1 dec. 04, 2006 page 4 of 4 cautions 1. opnext japan,inc.(opj) neither warrants nor grants licenses of any our rights or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. opj bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to ch ange without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. opj makes every attempt to ensure that its products are of high quality and reliability. however, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion cont rol, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by opj particularly for maximum rating, operating supply voltage range, heat radiation character istics, installation conditions and other characteristics. opj bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating opj product does not cause bodily injury, fire or other consequential damage due to operation of the opj product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from opj. 7. contact our sales office for any questions regarding this document or opj products. 1. the laser light is harmful to human body especially to eye no matter what directly or indirectly. the laser beam shall be observed or adjusted through infrared camera or equivalent. 2. this product contains gallium arsenide (gaas), which may seriously endanger your health even at very low doses. please avoid treatment which may create gaas powder or gas, such as disassembly or performing chemical experiments, when you handle the product. when disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. definition of items shown in this cas is in accordance with that shown in opto device databook issued by opj unless otherwise specified. sales offices device business unit opnext japan, inc. takagi bldg., 3f, 1-3-9, iwamoto-cho, chiyoda-ku, tokyo 101-0032 japan tel: (03) 3865-5591 for the detail of opnext, inc., see the following homepage: ?2007 opnext japan, inc., all rights reserved. printed in japan. colophon 2.0 japan (japanese) http://www.opnext.com/jp/products/ other area (english) http://www.opnext.com/products/
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